IRLR3410TRPBF vs IRF7832TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLR3410TRPBF sa pamamagitan ng Infineon at IRF7832TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLR3410TRPBF IRF7832TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET, 5th generation) HEXFET (trench MOSFET)
Drain-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 17 A —
Power Dissipation (Pd) at Tc=25C 79 W —
On-Resistance RDS(on) max 105 mOhm —
Gate Threshold Voltage Vgs(th) Logic-level (drive ~4.5V) —
Total Gate Charge (Qg) 22.7 nC —
Packhaging TO-252AA (DPAK), surface mount 8-SO (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55 C to +150 C (TJ)
Lead-Free / RoHS Yes (PBF suffix) —
Level ng MSL 1 (unlimited floor life at <30C/85% RH) 1 (per JEDEC J-STD-020)
Drain Tab Connection Tab electrically tied to Drain —
Polarity N-Channel enhancement mode —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7832TRPBF
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 20 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 4.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typical — 1.0 V to 2.5 V
Total Gate Charge (Qg) typical — 34 nC
Power Dissipation (PD) at TA=25C — 2.5 W
Tindminan RoHS — Compliant
Lead-Free — Yes

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