IRLR3410TRPBF vs IRF7832TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLR3410TRPBF tarafından Infineon ve IRF7832TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLR3410TRPBF | IRF7832TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (trench MOSFET) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Power Dissipation (Pd) at Tc=25C | 79 W | — |
| On-Resistance RDS(on) max | 105 mOhm | — |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | — |
| Total Gate Charge (Qg) | 22.7 nC | — |
| Paket | TO-252AA (DPAK), surface mount | 8-SO (SOIC-8) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55C to +175C (junction) | -55 C to +150 C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| MSL Seviyesi | 1 (unlimited floor life at <30C/85% RH) | 1 (per JEDEC J-STD-020) |
| Drain Tab Connection | Tab electrically tied to Drain | — |
| Polarity | N-Channel enhancement mode | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7832TRPBF |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| RoHS Durumu | — | Compliant |
| Lead-Free | — | Yes |