IRLR3636TRPBF vs IRFZ48NSTRLPBF Comparison

Detailed side-by-side comparison of IRLR3636TRPBF by Infineon and IRFZ48NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3636TRPBF IRFZ48NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.38 $1.18
FET Type N-Channel MOSFET, Metal Oxide N-Channel Power MOSFET
Drain-to-Source Voltage (V_DSS) 60 V β€”
Continuous Drain Current (I_D) at T_C = 25C 50 A β€”
Continuous Drain Current (I_D) at T_C = 100C [DATA_NEEDED: I_D at 100C] β€”
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] β€”
Maximum R_DS(on) at V_GS = 10V 6.8 mOhm β€”
Typical R_DS(on) at V_GS = 10V 5.4 mOhm β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) range] β€”
Total Gate Charge (Q_G) 33 nC β€”
Maximum Power Dissition (P_D) at T_C = 25C 143 W β€”
Operating Temperature Range -55C to +175C β€”
Package TO-252AA (DPAK) D2PAK (TO-263) Surface Mount
Mounting Type Surface Mount Surface Mount
Technology IR HEXFET / IR MOSFET β€”
RoHS Status Compliant Compliant
Lead-Free Yes (PBF suffix) β€”
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) @ Tc=25C β€” 64 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Static Drain-to-Source On-Resistance (Rds(on)) β€” 14 mΞ© at VGS = 10 V
Gate-to-Source Threshold Voltage (VGS(th)) β€” 2.0 V to 4.0 V
Total Gate Charge (Qg) β€” 54 nC
Gate-to-Source Voltage (VGS) max β€” Β±20 V
Power Dissipation (Pd) @ Tc=25C β€” 130 W
Power Dissipation (Pd) @ Ta=25C on FR-4 β€” 3.8 W
Operating Junction Temperature β€” -55C to +175C
Packaging β€” Tape & Reel (13-inch reel, TRL)
Lead Finish β€” Lead-free (PBF) matte tin
Technology Family β€” HEXFET advanced process technology

Datasheets & Resources

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