IRFZ48NSTRLPBF - 55V 64A N-Ch MOSFET, 14mΩ D2PAK | Infineon
MPN: IRFZ48NSTRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2 | $2.00 |
| 10 | $1.85 | $18.50 |
| 100 | $1.62 | $162.00 |
| 500 | $1.41 | $705.00 |
| 1,000 | $1.18 | $1,180.00 |
Drop-in alternatives for IRFZ48NSTRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →IRFZ48NSTRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | 64 A |
| Static Drain-to-Source On-Resistance (Rds(on)) | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 54 nC |
| Gate-to-Source Voltage (VGS) max | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | 3.8 W |
| Operating Junction Temperature | -55C to +175C |
| Package | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | Lead-free (PBF) matte tin |
| RoHS Status | Compliant |
| Technology Family | HEXFET advanced process technology |
IRFZ48NSTRLPBF Pin Configuration
| Pin 1 | Gate — Gate terminal - control input, VGS drive |
| Pin 2 | Drain — Drain terminal (also connected to metal tab) |
| Pin 3 | Source — Source terminal - power return |
| Pin 4 | Tab — Drain (electrically connected to pin 2) - heatsink tab |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRFZ48NSTRLPBF is suitable for 6 applications: Brushed DC Motor Drive (12V/24V), Synchronous Rectification in SMPS, Reverse-Polarity Battery Protection, Class-D Audio Output Stage, Solenoid and Relay Driver, Automotive Body Electronics Switching.
Brushed DC Motor Drive (12V/24V)
The IRFZ48NSTRLPBF is well suited for brushed DC motor drive in 12 V and 24 V systems, where its 64 A continuous drain current (Tc=25°C) handles motor stall in-rush and its 14 mΩ Rds(on) at VGS=10 V minimizes conduction loss during PWM control. Placed as a low-side switch between motor terminal and ground, it is driven by a gate driver IC such as the IRS2109STRPBF at 1-20 kHz PWM with a 10 Ω gate resistor; the low 54 nC Qg ensures fast switching without excessive gate-driver losses. Compared to a TO-220 IRFZ48N, the D2PAK surface-mount version enables direct PCB-mount cooling through the drain tab into the copper pour, reducing thermal resistance on a 2 oz copper layout to roughly 35°C/W.
Recommended
Synchronous Rectification in SMPS
In secondary-side synchronous rectification of 12 V output SMPS and 24 V telecom bus converters, the IRFZ48NSTRLPBF replaces a Schottky rectifier to improve efficiency by 2-4%. With Rds(on) of 14 mΩ and 54 nC Qg, it suits CCM operation up to roughly 100 kHz before switching losses dominate. Driven by a synchronous-rectifier controller such as the IR1161 or by a fixed-deadtime gate signal from the primary-side controller, the MOSFET must have a body diode capable of handling the dead-time commutation - the IRFZ48N's intrinsic body diode is rated for the full 64 A continuous. Use a Schottky co-pack or RC snubber across drain-source to limit reverse-recovery spikes.
Recommended
Reverse-Polarity Battery Protection
Used as a high-side P-channel substitute or as a low-side N-channel disconnect switch in 12 V / 24 V battery protection circuits, the IRFZ48NSTRLPBF provides a low-resistance disconnect path (14 mΩ) and handles in-rush from capacitor banks. In a low-side N-channel configuration, a charge pump such as the LT3482 or BCR431UXTSA1 generates the 10 V gate drive above battery positive to fully enhance the MOSFET; in high-side P-channel designs, the IRFZ48N is replaced by a P-channel part. The MOSFET's 175°C maximum junction temperature supports automotive under-hood environments, and its 55 V VDS rating tolerates load-dump transients up to 35 V (per ISO 7637-2 with TVS clamp).
Recommended
Class-D Audio Output Stage
In 100 W to 300 W class-D audio amplifiers, the IRFZ48NSTRLPBF serves as the output-side half-bridge switch, where its 14 mΩ Rds(on) and 64 A peak current drive a 4 Ω or 8 Ω loudspeaker load. Driven by a gate driver such as the IRS2092 or IRS2153DSTRPBF at 250-400 kHz PWM, the MOSFET's low Qg of 54 nC keeps switching losses to under 5 W per channel at full output. Compared to older IRF540N parts, the IRFZ48N delivers nearly 70% lower conduction loss - directly translating to higher amplifier efficiency and smaller heatsinks. Designers should add a small RC snubber across drain-source to suppress ringing in the LC output filter.
Recommended
Solenoid and Relay Driver
Industrial solenoid and relay drivers benefit from the IRFZ48NSTRLPBF's 64 A peak current capability and 14 mΩ Rds(on) to handle inductive kickback when de-energizing 24 V to 48 V coils. Placed as a low-side switch with a flyback diode across the solenoid, the MOSFET switches cleanly without arcing on the relay contacts; the 130 W power dissipation rating (Tc) gives ample thermal margin for continuous duty. The 175°C junction temperature rating supports industrial control cabinets at elevated ambient temperatures up to 85°C. Add a 10 Ω to 47 Ω gate resistor and a TVS diode across drain-source for robust EMI performance in factory environments.
Recommended
Automotive Body Electronics Switching
The IRFZ48NSTRLPBF supports 12 V automotive body-electronics loads such as headlamp relays, seat heaters, and blower motors where 55 V VDS rating handles load-dump transients and the 64 A rating covers cold-start in-rush. Although the part itself is not AEC-Q100 qualified, its Infineon HEXFET process technology is automotive-proven in similar SKUs; for strict AEC-Q100 requirements, use the IRFZ48NSTRLPBF in non-safety sub-systems. The D2PAK package is well suited for engine-control-unit (ECU) auxiliary outputs, where the metal-tab drain can be screwed to a heatsink for high-current loads above 30 A continuous.
Recommended
Recommended Products Summary
Engineering reference data for IRFZ48NSTRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFZ48NSTRRPBF | IRLZ44NSTRLPBF | IRFR2405TRLPBF | IRLR3636TRPBF | IRLR3410TRPBF | IRFZ24NPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK (TO-252) - different footprint | DPAK (TO-252) - different footprint | DPAK (TO-252) - different footprint | TO-220AB - through-hole |
| VDS (max) | 55 V | 55 V | 55 V | 55 V | 60 V | 55 V | 55 V |
| Continuous Drain Current (Tc=25C) | 64 A | 64 A | 47 A | 56 A | 50 A | 40 A | 48 A |
| Rds(on) at VGS=10V | 14 mΩ | 14 mΩ | 22 mΩ | [DATA_NEEDED] | 10.6 mΩ | [DATA_NEEDED] | [DATA_NEEDED] |
| Total Gate Charge (Qg) | 54 nC | 54 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| VGS(th) | 2.0 - 4.0 V (standard) | 2.0 - 4.0 V | 1.0 - 2.0 V (logic-level) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation (Tc) | 130 W | 130 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active | Obsolete (migrate to TRL) | Active | Active | Active | Active | Active |
| RoHS / Lead-free | Yes / Yes (PBF) | Yes / Yes (PBF) | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Lowest Rds(on) at 55V VDS in D2PAK among Infineon HEXFET family (vs IRLZ44NSTRLPBF)
- Active production with broad distributor stock (vs IRFZ48NSTRRPBF)
- Higher continuous current vs DPAK alternatives (vs IRLR3636TRPBF (DPAK))
Design Notes
The D2PAK package dissipates up to 130 W at Tc=25°C, but on a standard FR-4 board the realistic power dissipation is limited to 3.8 W (Ta) due to RθJA. To exceed this, design the PCB copper pour on the drain tab as a top-side thermal land at least 1 square inch of 2 oz copper, with thermal vias to inner copper planes. Estimated: with 2 oz copper on a 1 sq inch top land, RθJA drops to ~35°C/W, allowing up to 4 W continuous at 25°C ambient with proper airflow. For continuous 100 W loads, attach an external heatsink with thermal compound.
Minimize the gate-drive loop area by placing the gate resistor and gate-driver IC as close to the gate pin as possible. Use a 10 Ω to 100 Ω gate resistor to dampen parasitic ringing; lower values give faster switching but higher EMI. The source-sense return must share the same ground path as the gate-driver ground - any inductance in the source path will cause voltage feedback that can falsely turn on the MOSFET during fast dv/dt transitions (Miller turn-on). Add a small RC snubber (10 Ω + 1 nF) across drain-source if ringing exceeds 20% of VDS.
Do not exceed VGS = ±20 V - use a Zener clamp (15 V) gate-to-source if the gate driver output can overshoot during switching transients. Avoid using the IRFZ48NSTRLPBF at VDS continuously above 48 V; the 55 V rating allows transient headroom but not sustained 55 V operation. The internal body diode is rated for average forward current, not repetitive peak - for high-frequency switching, ensure the body diode recovery time fits within the dead-time of the half-bridge; otherwise add an external Schottky co-pack.
Compliance Information
RoHS compliant per Infineon product page (lead-free matte-tin finish, PBF suffix). Not AEC-Q100 qualified - for automotive safety applications choose an AEC-Q100 part such as BTS6133DAUMA1. The Infineon part is part of the HEXFET advanced-process family.
