IRLR3636TRPBF vs IRFZ48NSTRLPBF 비교
다음의 상세 나란히 비교: IRLR3636TRPBF 제조: Infineon 및 IRFZ48NSTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLR3636TRPBF | IRFZ48NSTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.38 | $1.18 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel Power MOSFET |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at T_C = 25C | 50 A | — |
| Continuous Drain Current (I_D) at T_C = 100C | [DATA_NEEDED: I_D at 100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum R_DS(on) at V_GS = 10V | 6.8 mOhm | — |
| Typical R_DS(on) at V_GS = 10V | 5.4 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) range] | — |
| Total Gate Charge (Q_G) | 33 nC | — |
| Maximum Power Dissition (P_D) at T_C = 25C | 143 W | — |
| 동작 온도 범위 | -55C to +175C | — |
| 패키지 | TO-252AA (DPAK) | D2PAK (TO-263) Surface Mount |
| 실장 유형 | Surface Mount | Surface Mount |
| Technology | IR HEXFET / IR MOSFET | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 64 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-to-Source On-Resistance (Rds(on)) | — | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 54 nC |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | — | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | — | 3.8 W |
| 동작 접합 온도 | — | -55C to +175C |
| Packaging | — | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | — | Lead-free (PBF) matte tin |
| Technology Family | — | HEXFET advanced process technology |