IRLTS2242TRPBF vs IRFML8244TRPBF Comparison

Detailed side-by-side comparison of IRLTS2242TRPBF by Infineon and IRFML8244TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLTS2242TRPBF IRFML8244TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical and min/max]
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) IR MOSFET (HEXFET)
Package TSOP-6 (Micro 6) SOT-23-3 (TO-236-3, SC-59)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55 C to +150 C (junction)
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
MSL Level MSL1 (per JEDEC J-STD-020) MSL1
RoHS Status Compliant Compliant (Pb-free, halogen-free)
Lead-Free Yes —
Halogen Free Yes —
Transistor Type — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) — 5.8 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
RDS(on) max @ VGS=10V — 24 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — 5.4 nC
Power Dissipation (PD) max — 1.25 W (Ta)
Pin Configuration — Industry-standard SOT-23 pinout (G-D-S)
Qualification — Consumer grade

Datasheets & Resources

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