IRLTS2242TRPBF vs IRFML8244TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLTS2242TRPBF disebabkan oleh Infineon dan IRFML8244TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLTS2242TRPBF IRFML8244TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical and min/max]
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) IR MOSFET (HEXFET)
Kemasan TSOP-6 (Micro 6) SOT-23-3 (TO-236-3, SC-59)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +150 C (junction)
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
Aras MSL MSL1 (per JEDEC J-STD-020) MSL1
Status RoHS Compliant Compliant (Pb-free, halogen-free)
Lead-Free Yes —
Boson Bebas Yes —
Jenis Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) — 5.8 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
RDS(on) max @ VGS=10V — 24 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — 5.4 nC
Power Dissipation (PD) max — 1.25 W (Ta)
Pin Configuration — Industry-standard SOT-23 pinout (G-D-S)
Qualification — Consumer grade

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