IRLTS2242TRPBF vs IRFML8244TRPBF Perbandingan

Perbandingan bersamaan detil IRLTS2242TRPBF dari Infineon dan IRFML8244TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLTS2242TRPBF IRFML8244TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -20 V —
Continuous Drain Current (ID) at TA=25C -6.9 A —
Power Dissipation (PD) at TA=25C 2.0 W —
On-Resistance RDS(on) max at VGS=-10V 32 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS absolute max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: VGS(th) typical and min/max]
Gate Drive Voltage (logic level) 4.5 V (fully enhanced), 2.5 V capable —
Technology IR MOSFET (HEXFET) IR MOSFET (HEXFET)
Paket TSOP-6 (Micro 6) SOT-23-3 (TO-236-3, SC-59)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55 C to +150 C (junction)
Package Thermal Resistance (RthJA) [DATA_NEEDED: RthJA on 1 inch FR-4 PCB] —
Level MSL MSL1 (per JEDEC J-STD-020) MSL1
Status RoHS Compliant Compliant (Pb-free, halogen-free)
Lead-Free Yes —
Bebas Halogen Yes —
Tipe Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) — 5.8 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
RDS(on) max @ VGS=10V — 24 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — 5.4 nC
Power Dissipation (PD) max — 1.25 W (Ta)
Pin Configuration — Industry-standard SOT-23 pinout (G-D-S)
Qualification — Consumer grade

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