IRS2104STRPBF vs 2ED2106S06FXUMA1 Comparison

Detailed side-by-side comparison of IRS2104STRPBF by Infineon and 2ED2106S06FXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRS2104STRPBF 2ED2106S06FXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Half-Bridge Gate Driver IC —
Topology Half-Bridge (High-Side + Low-Side) —
Number of Channels 2 (HS + LS, dependent) —
High-Side Offset Voltage (VS) -5 V to +600 V —
Logic Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A 0.29 A
Sink Current (typ.) 0.6 A 0.7 A
Propagation Delay (typ.) 150 ns 100 ns
Rise Time (typ.) 35 ns —
Fall Time (typ.) 70 ns —
Quiescent Current (typ.) 150 uA —
Undervoltage Protection Yes (VCC and VBS UVLO) —
Shutdown Pin Yes (SD, active-low per typical usage) —
Logic Input Compatibility Standard CMOS / LSTTL —
Operating Junction Temperature -40C to +150C —
Package 8-Lead SOIC (SOIC-8) PG-DSO-8-69 (DSO-8)
Mounting Type Surface Mount Surface Mount
MSL Level 2 (1 year floor life per datasheet) —
Qualification Level Industrial —
RoHS Status Compliant (PbF suffix) —
Offset Voltage (Voffset max) — 650 V
Configuration — High-Side and Low-Side (Half-Bridge)
Input Logic Compatibility — CMOS, TTL
Number of Outputs — 2 (1 high-side, 1 low-side)
Number of Drivers — 2
Number of Pins — 8
Bootstrap Diode — Integrated
Operating Temperature Range — -40C to +125C
Packaging — Tape & Reel
Output Type — Half-Bridge, Non-Inverting

Datasheets & Resources

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