IS43TR16256A-125KBL vs K4B4G1646D-BPH90 Comparison
Detailed side-by-side comparison of IS43TR16256A-125KBL by ISSI, Integrated Silicon Solution Inc and K4B4G1646D-BPH90 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI
IS43TR16256A-125KBL ✓ ActiveSamsung Electronics
K4B4G1646D-BPH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BPH90 ✓ ActiveSpecification Comparison
| Parameter | IS43TR16256A-125KBL | K4B4G1646D-BPH90 |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $19.09 | $7.60 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | — |
| Data Rate | 1600MT/s | 2133 Mb/s per pin |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| Supply Voltage (VDD) | 1.5V ± 0.075V | — |
| Supply Voltage (VDDQ) | 1.5V ± 0.075V | — |
| CAS Latency | 11 | Programmable up to 14 |
| Burst Length | 8 (with burst chop 4) | 8, 4 (with burst chop) |
| Package | 96-TWBGA (9x13mm) | 96FBGA |
| Mounting Type | Surface Mount | — |
| Operating Temperature | 0°C to +95°C (Tc) | 0°C to +85°C |
| RoHS | Compliant | — |
| Number of Pins | 96 | — |
| Organization | 256M x 16 | 32M x 16 |
| Density | — | 4Gb |
| Number of Banks | — | 8 |
| Supply Voltage | — | 1.35V (DDR3L) |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |