IS43TR16256A-125KBL vs K4B4G1646D-BPH90 对比
详细并排对比 IS43TR16256A-125KBL 出自 ISSI, Integrated Silicon Solution Inc 和 K4B4G1646D-BPH90 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256A-125KBL - 4Gb DDR3 SDRAM 256Mx16 | ISSI
IS43TR16256A-125KBL ✓ 量产中
规格对比
| 参数 | IS43TR16256A-125KBL | K4B4G1646D-BPH90 |
|---|---|---|
| 品牌 | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $19.09 | $7.60 |
| 存储器类型 | DDR3 SDRAM | DDR3L SDRAM |
| 存储容量 | 4Gbit (256M x 16) | — |
| 数据速率 | 1600MT/s | 2133 Mb/s per pin |
| Clock Frequency | 800 MHz | — |
| Access Time | 20 ns | — |
| Supply Voltage (VDD) | 1.5V ± 0.075V | — |
| Supply Voltage (VDDQ) | 1.5V ± 0.075V | — |
| CAS 延迟 | 11 | Programmable up to 14 |
| Burst Length | 8 (with burst chop 4) | 8, 4 (with burst chop) |
| 封装 | 96-TWBGA (9x13mm) | 96FBGA |
| 安装类型 | Surface Mount | — |
| 工作温度 | 0°C to +95°C (Tc) | 0°C to +85°C |
| RoHS | Compliant | — |
| 引脚数 | 96 | — |
| 存储组织 | 256M x 16 | 32M x 16 |
| Density | — | 4Gb |
| Number of Banks | — | 8 |
| 电源电压 | — | 1.35V (DDR3L) |
| On-Die Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Lead-Free | — | Yes |
| 无卤 | — | Yes |
| RoHS Compliant | — | Yes |