IS43TR16256AL-125KBL vs H5TC4G63CFR-H9A Comparison

Detailed side-by-side comparison of IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc and H5TC4G63CFR-H9A by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL ✓ Active
SK hynix
H5TC4G63CFR-H9A H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A - 4Gb DDR3L SDRAM 96-FBGA | SK hynix

H5TC4G63CFR-H9A ✓ Active

Specification Comparison

Parameter IS43TR16256AL-125KBL H5TC4G63CFR-H9A
Brand ISSI, Integrated Silicon Solution Inc SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.60 $6.50
Memory Type SDRAM - DDR3L DDR3L SDRAM
Memory Size 4Gbit (256M x 16) —
Interface Parallel —
Clock Frequency 800 MHz —
Access Time 20 ns —
Supply Voltage 1.35V (backward compatible to 1.5V) —
Package 96-TWBGA (9x13mm) 96-ball TFBGA
Mounting Type Surface Mount —
Operating Temperature 0°C ~ 95°C —
Memory Format DRAM —
Technology SDRAM - DDR3L —
Data Rate 1600 Mbps [DATA_NEEDED: Data rate (e.g., 1866 Mbps)]
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Number of Terminals 96 96
Memory Density — 4Gb (4294967296 bit)
Organization — 256M x 16
Supply Voltage (VDD) — 1.35V + 0.100 / - 0.067V
Supply Voltage (VDDQ) — 1.35V + 0.100 / - 0.067V
Package Shape — RECTANGULAR
Operating Temperature Range — [DATA_NEEDED: Operating temperature range]
Halogen Free — Yes
CAS Latency — [DATA_NEEDED: CAS latency]
Burst Length — 8, 4 (with burst chop)
Differential Clock Inputs — Yes (CK, CK)
Differential Data Strobe — Yes (DQS, DQS)
On-Chip DLL — Yes
DM (Data Mask) — Yes

Datasheets & Resources

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