ISC016N08NM8SCATMA1 vs IAUCN08S7L033ATMA1 Perbandingan

Perbandingan bersamaan detil ISC016N08NM8SCATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC016N08NM8SCATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 8 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current at TA=25°C (ID) 29 A —
Continuous Drain Current at TC=25°C (ID) 269 A —
Power Dissipation at TC=25°C (PD) 263 W —
Paket PG-WSON-8-2 (SuperSO8 DSC, 5x6 mm) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 8 (shield-gate trench) OptiMOS 7 trench MOSFET
Rentang Suhu Kerja -55C to +175C -55°C to +175°C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: typical Qg @ VGS=10V] —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, typical for this package)
Drain Tab Connection Top + bottom exposed (dual-side cooling) —
Series — Automotive OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)

Spek dan Sumber

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