ISC024N08NM7ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC024N08NM7ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC024N08NM7ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) at Ta=25C | 24 A | — |
| Continuous Drain Current (Id) at Tc | 167 A | — |
| Power Dissipation (Pd) at Ta=25C | 3 W | — |
| Power Dissipation (Pd) at Tc | 150 W | — |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | PG-TDSON-8 (SSO8) | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Gate Threshold Voltage (typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Rds(on) at Vgs=10V (typ) | [DATA_NEEDED: Rds(on) typical value] | — |
| Total Gate Charge Qg (typ) | [DATA_NEEDED: total gate charge] | — |
| RoHS Status | Compliant | Compliant |
| Halogen Free | Yes | — |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 6 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Continuous Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Package | — | PG-TDSON-8 FL |
| Number of Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Operating Temperature | — | -55 °C to +175 °C |