ISC024N08NM7ATMA1 vs ISC151N08NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC024N08NM7ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC024N08NM7ATMA1

ISC024N08NM7ATMA1 - 80V OptiMOS 7 N-Channel MOSFET | Infineon

ISC024N08NM7ATMA1 βœ“ Active
Infineon
ISC151N08NM6ATMA1

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 βœ“ Active

Specification Comparison

Parameter ISC024N08NM7ATMA1 ISC151N08NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.02 $0.78
Manufacturer Infineon Technologies β€”
Series OptiMOS 7 β€”
Channel Type N-Channel β€”
Drain-Source Voltage (Vdss) 80 V β€”
Continuous Drain Current (Id) at Ta=25C 24 A β€”
Continuous Drain Current (Id) at Tc 167 A β€”
Power Dissipation (Pd) at Ta=25C 3 W β€”
Power Dissipation (Pd) at Tc 150 W β€”
Mounting Type Surface Mount Surface Mount
Package / Case PG-TDSON-8 (SSO8) β€”
Operating Temperature Range -55 C to +175 C β€”
Gate Threshold Voltage (typ) [DATA_NEEDED: gate threshold voltage] β€”
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) typical value] β€”
Total Gate Charge Qg (typ) [DATA_NEEDED: total gate charge] β€”
RoHS Status Compliant Compliant
Halogen-Free Yes β€”
MSL Level 1 (per JEDEC J-STD-020) β€”
Technology OptiMOS 7 trench MOSFET OptiMOS 6
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (TA=25Β°C) β€” 9.2 A
Continuous Drain Current (TC=25Β°C) β€” 37 A
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 48 W
On-Resistance RDS(on) max β€” 15.1 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 3.5 V
Package β€” PG-TDSON-8 FL
Number of Pins β€” 8
Channel Mode β€” Enhancement
Operating Temperature β€” -55 Β°C to +175 Β°C

Datasheets & Resources

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