ISC025N08NM5LF2ATMA1 vs ISZ028N03LF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISC025N08NM5LF2ATMA1 dari Infineon dan ISZ028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC025N08NM5LF2ATMA1 ISZ028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 StrongIRFET 2 (Trench MOSFET)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
Paket PG-TDSON-8 FL (Surface Mount) PG-TSDSON-8 FL (FL = flat lead)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55C to +175C (junction, typical)
Polarity N-Channel —
Status RoHS Compliant Compliant
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Tc — 128 A
Continuous Drain Current (ID) at Ta — 22 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — 2.35 V
On-Resistance (RDS(on)) max — 2.8 mΩ
Power Dissipation (Tc) — 83 W
Power Dissipation (Ta) — 3 W
Gate Drive Voltage (recommended) — 10 V (logic level at 4.5 V)
Level MSL — 1
Avalanche Energy Rated — Yes (single-pulse)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]

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