ISC025N08NM5LF2ATMA1 vs ISZ028N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC025N08NM5LF2ATMA1 disebabkan oleh Infineon dan ISZ028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISC025N08NM5LF2ATMA1 ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon

ISC025N08NM5LF2ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISC025N08NM5LF2ATMA1 ISZ028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide), OptiMOS 5 LF2 StrongIRFET 2 (Trench MOSFET)
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) @ TA=25°C 23 A —
Continuous Drain Current (ID) @ TC=25°C 198 A —
On-Resistance (RDS(on)) Max 2.55 mΩ —
Gate-Source Threshold (VGS(th)) Max 3.9 V —
Total Gate Charge (Qg) Max 96 nC —
Power Dissipation @ TA 3 W —
Power Dissipation @ TC 217 W —
Kemasan PG-TDSON-8 FL (Surface Mount) PG-TSDSON-8 FL (FL = flat lead)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55C to +175C (junction, typical)
Polarity N-Channel —
Status RoHS Compliant Compliant
Ordering Code Suffix ATMA1 (Tape & Reel, 13-inch) —
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Tc — 128 A
Continuous Drain Current (ID) at Ta — 22 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — 2.35 V
On-Resistance (RDS(on)) max — 2.8 mΩ
Power Dissipation (Tc) — 83 W
Power Dissipation (Ta) — 3 W
Gate Drive Voltage (recommended) — 10 V (logic level at 4.5 V)
Aras MSL — 1
Avalanche Energy Rated — Yes (single-pulse)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]

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