ISC030N12NM6ATMA1 vs ISC011N04NM7VATMA1 Comparison
Detailed side-by-side comparison of ISC030N12NM6ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC030N12NM6ATMA1
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
ISC030N12NM6ATMA1 β ActiveInfineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | ISC030N12NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.41 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 (trench) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS max) | 120 V | β |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | β |
| Continuous Drain Current (ID, Ta) | 21 A | β |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | β |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | β |
| Power Dissipation (Tc=25 C) | 250 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 (source-down) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (junction) | β |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | β |
| Configuration | Single N-channel, source-down | β |
| Packaging (suffix) | Tape & Reel (ATMA1) | β |
| RoHS | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 38 A |
| Continuous Drain Current (ID) at TC | β | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.1 mΞ© |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 136 W |
| Gate Threshold Voltage (Vth) | β | Up to 3.2 V |
| Short-Circuit Withstand | β | Yes (current-limited) |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (TJ) |
| RoHS Compliance | β | Compliant (per Infineon product page) |
| MSL Level | β | MSL 1 (per JEDEC J-STD-020) |