ISC030N12NM6ATMA1 vs ISC011N04NM7VATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC030N12NM6ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC030N12NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (trench) | Trench MOSFET, silicon |
| Drain-Source Voltage (VDS max) | 120 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | — |
| Continuous Drain Current (ID, Ta) | 21 A | — |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | — |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | — |
| Pembuangan Kuasa (TC=25°C) | 250 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Kemasan | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 (source-down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | — |
| Configuration | Single N-channel, source-down | — |
| Packaging (suffix) | Tape & Reel (ATMA1) | — |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C (TJ) |
| RoHS Compliance | — | Compliant (per Infineon product page) |
| Aras MSL | — | MSL 1 (per JEDEC J-STD-020) |