ISC030N12NM6ATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC030N12NM6ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC030N12NM6ATMA1
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
ISC030N12NM6ATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC030N12NM6ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.86 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 6 (trench) | β |
| Drain-Source Voltage (VDS max) | 120 V | β |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | β |
| Continuous Drain Current (ID, Ta) | 21 A | β |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | β |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | β |
| Power Dissipation (Tc=25 C) | 250 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (junction) | β |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | β |
| Configuration | Single N-channel, source-down | β |
| Packaging (suffix) | Tape & Reel (ATMA1) | β |
| RoHS | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |