ISC030N12NM6ATMA1 vs ISC028N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC030N12NM6ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC030N12NM6ATMA1 ISC028N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Technology OptiMOS 6 (trench) —
Drain-Source Voltage (VDS max) 120 V —
Continuous Drain Current (ID, Tc=25 C) 194 A —
Continuous Drain Current (ID, Ta) 21 A —
On-Resistance RDS(on) max 3.4 mOhm @ VGS=10 V —
On-Resistance RDS(on) typical 3.0 mOhm @ VGS=10 V —
Power Dissipation (TC=25°C) 250 W —
Power Dissipation (Ta) 3 W —
Package PG-TSON-8-3 (SuperSO8 5x6 mm) PG-TDSON-8-62 (5x6 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C (junction) —
Gate Drive Voltage (recommended) 10 V (full RDS(on)) —
Configuration Single N-channel, source-down —
Packaging (suffix) Tape & Reel (ATMA1) —
RoHS Compliant —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 30V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Operating Junction Temperature — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)
MSL Level — 1 (per JEDEC J-STD-020)

Datasheets & Resources

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