ISC030N12NM6ATMA1 vs ISC028N03LF2SATMA1 对比
详细并排对比 ISC030N12NM6ATMA1 出自 Infineon 和 ISC028N03LF2SATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC030N12NM6ATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.62 | $0.86 |
| 晶体管类型 | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (trench) | — |
| Drain-Source Voltage (VDS max) | 120 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | — |
| Continuous Drain Current (ID, Ta) | 21 A | — |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | — |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | — |
| 功耗（TC=25°C） | 250 W | — |
| Power Dissipation (Ta) | 3 W | — |
| 封装 | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | -55 C to +175 C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | — |
| Configuration | Single N-channel, source-down | — |
| Packaging (suffix) | Tape & Reel (ATMA1) | — |
| RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| 工作结温 | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |