ISC030N12NM6ATMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of ISC030N12NM6ATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC030N12NM6ATMA1
ISC030N12NM6ATMA1 - 120V 194A OptiMOS 6 N-Ch MOSFET | Infineon
ISC030N12NM6ATMA1 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISC030N12NM6ATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.51 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 6 (trench) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS max) | 120 V | β |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | β |
| Continuous Drain Current (ID, Ta) | 21 A | β |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | β |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | β |
| Power Dissipation (Tc=25 C) | 250 W | β |
| Power Dissipation (Ta) | 3 W | β |
| Package | PG-TSON-8-3 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TDSON-8-6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (junction) | β |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | β |
| Configuration | Single N-channel, source-down | β |
| Packaging (suffix) | Tape & Reel (ATMA1) | β |
| RoHS | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | ISC045N03L5SATMA1 |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| RoHS Status | β | Compliant |