ISC030N12NM6ATMA1 vs ISC045N03L5SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC030N12NM6ATMA1 disebabkan oleh Infineon dan ISC045N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC030N12NM6ATMA1 ISC045N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 6 (trench) OptiMOS 5 / Trench
Drain-Source Voltage (VDS max) 120 V —
Continuous Drain Current (ID, Tc=25 C) 194 A —
Continuous Drain Current (ID, Ta) 21 A —
On-Resistance RDS(on) max 3.4 mOhm @ VGS=10 V —
On-Resistance RDS(on) typical 3.0 mOhm @ VGS=10 V —
Pembuangan Kuasa (TC=25°C) 250 W —
Power Dissipation (Ta) 3 W —
Kemasan PG-TSON-8-3 (SuperSO8 5x6 mm) SuperSO8 5x6 (PG-TDSON-8-6)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55 C to +175 C (junction) —
Gate Drive Voltage (recommended) 10 V (full RDS(on)) —
Configuration Single N-channel, source-down —
Packaging (suffix) Tape & Reel (ATMA1) —
RoHS Compliant —
Manufacturer — Infineon Technologies
Part Number — ISC045N03L5SATMA1
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W
Gambaran Suhu Operasi — -55 °C to +150 °C
Status RoHS — Compliant

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