ISC030N12NM6ATMA1 vs ISC151N08NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC030N12NM6ATMA1 dari Infineon dan ISC151N08NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC030N12NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 6 (trench) | OptiMOS 6 |
| Drain-Source Voltage (VDS max) | 120 V | — |
| Continuous Drain Current (ID, Tc=25 C) | 194 A | — |
| Continuous Drain Current (ID, Ta) | 21 A | — |
| On-Resistance RDS(on) max | 3.4 mOhm @ VGS=10 V | 15.1 mΩ |
| On-Resistance RDS(on) typical | 3.0 mOhm @ VGS=10 V | — |
| Dissipasi Listrik (TC=25°C) | 250 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Paket | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8 FL |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55 C to +175 C (junction) | -55 °C to +175 °C |
| Gate Drive Voltage (recommended) | 10 V (full RDS(on)) | — |
| Configuration | Single N-channel, source-down | — |
| Packaging (suffix) | Tape & Reel (ATMA1) | — |
| RoHS | Compliant | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Alir Berlanjut (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Jumlah Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Status RoHS | — | Compliant |