ISC037N12NM6ATMA1 vs IAUCN04S7N019GATMA1 Comparison
Detailed side-by-side comparison of ISC037N12NM6ATMA1 by Infineon and IAUCN04S7N019GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ ActiveSpecification Comparison
| Parameter | ISC037N12NM6ATMA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Package | PG-TDSON-8 FL (SuperSO8) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | [DATA_NEEDED: junction temperature range from datasheet] |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Automotive Qualification | — | AEC-Q101 (per family datasheet) |
| Lead-Free | — | Yes |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |