ISC037N12NM6ATMA1 vs IAUCN04S7N019GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC037N12NM6ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N019GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC037N12NM6ATMA1 ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon

ISC037N12NM6ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC037N12NM6ATMA1 IAUCN04S7N019GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 6 (N-channel trench MOSFET) —
Drain-Source Voltage (Vds) 120 V —
Continuous Drain Current (Id) at Ta=25C 19.2 A —
Pulsed Drain Current (Idm) at Tc 163 A —
On-Resistance Rds(on) typ at Vgs=10V 3.7 mOhm —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 214 W —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) value] —
Gate Charge (Qg) typ [DATA_NEEDED: Qg total] —
Packhaging PG-TDSON-8 FL (SuperSO8) PG-THSOG-4-1 (SSO4G 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C (junction) [DATA_NEEDED: junction temperature range from datasheet]
Tindminan RoHS Compliant Compliant
Avalanche Energy Rated Yes (single-pulse) —
Level ng MSL 1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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