ISC037N12NM6ATMA1 vs IPT017N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC037N12NM6ATMA1 by Infineon and IPT017N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 β ActiveInfineon
IPT017N12NM6ATMA1
IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon
IPT017N12NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC037N12NM6ATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.62 | $1.85 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS 6 |
| Drain-Source Voltage (Vds) | 120 V | β |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | β |
| Pulsed Drain Current (Idm) at Tc | 163 A | β |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | β |
| Power Dissipation at Ta | 3 W | 3 W |
| Power Dissipation at Tc | 214 W | 395 W |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | β |
| Package | PG-TDSON-8 FL (SuperSO8) | PG-HSOF-8 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (junction) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IPT017N12NM6ATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 120 V |
| Continuous Drain Current (ID) at Ta | β | 29 A |
| Continuous Drain Current (ID) at Tc | β | 331 A |
| On-Resistance RDS(on) max | β | 1.7 mOhm |
| Operating Temperature | β | -55C to +175C |
| Pin Count | β | 8 + tab |
| Packaging | β | Tape & Reel |