ISC037N12NM6ATMA1 vs IPT017N12NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC037N12NM6ATMA1 sa pamamagitan ng Infineon at IPT017N12NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC037N12NM6ATMA1 - 120V 3.7mOhm N-Channel OptiMOS 6 | Infineon
ISC037N12NM6ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | ISC037N12NM6ATMA1 | IPT017N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | OptiMOS 6 |
| Drain-Source Voltage (Vds) | 120 V | — |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | 3 W |
| Power Dissipation at Tc | 214 W | 395 W |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Packhaging | PG-TDSON-8 FL (SuperSO8) | PG-HSOF-8 (TOLL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPT017N12NM6ATMA1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 120 V |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | 331 A |
| On-Resistance RDS(on) max | — | 1.7 mOhm |
| Temperature na Operasyon | — | -55C to +175C |
| Bilang ng Pin | — | 8 + tab |
| Packaging | — | Tape & Reel |