ISC040N10NM7ATMA1 vs ISC028N03LF2SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC040N10NM7ATMA1 disebabkan oleh Infineon dan ISC028N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC040N10NM7ATMA1 ISC028N03LF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 OptiMOS 5 30V
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Ta=25°C 18 A —
Continuous Drain Current (ID) at Tc=25°C 130 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at Ta=25°C 3 W —
Power Dissipation (PD) at Tc=25°C 150 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
RDS(on) @ VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Kemasan PG-TDSON-8-34 (SSO8) PG-TDSON-8-62 (5x6 mm) with exposed pad
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +175°C (TJ max) —
Status RoHS Compliant —
Aras MSL MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at TA=25C — 24 A
Continuous Drain Current (ID) at TC=25C — 128 A
On-Resistance RDS(on) max at VGS=10V — 2.8 mOhm
Gate Threshold Voltage VGS(th) typ — 2.35 V
Power Dissipation at TA — 3 W
Power Dissipation at TC — 83 W
Suhu Hubungan Operasi — -55 C to +175 C
RoHS / Lead-Free — Yes (RoHS compliant)

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