ISC045N03L5SATMA1 vs IPD028N06NF2SATMA1 Perbandingan

Perbandingan bersamaan detil ISC045N03L5SATMA1 dari Infineon dan IPD028N06NF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC045N03L5SATMA1 IPD028N06NF2SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 IPD028N06NF2SATMA1
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 / Trench —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25°C 18 A 24 A
Continuous Drain Current (ID) at TC=25°C 63 A 139 A
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max]
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Paket SuperSO8 5x6 (PG-TDSON-8-6) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C —
Status RoHS Compliant Compliant
Technology Family — OptiMOS 5 60V
Drain-Source Voltage (VDS) max — 60 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) typ @ VGS=10V — 2.85 mΩ
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typ]
Power Dissipation at TA=25°C — 3 W
Power Dissipation at TC=25°C — 150 W
Rentang Suhu Hubung Kerja — -55 C to +175 C
Jumlah Pin — 3 (Gate, Drain-tab, Source)
Level MSL — 1 (per JEDEC J-STD-020)
Packing — Tape & Reel (T&R)

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