ISC045N03L5SATMA1 vs IQFH55N04NM6ATMA1 Comparison

Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and IQFH55N04NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter ISC045N03L5SATMA1 IQFH55N04NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC045N03L5SATMA1 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 / Trench Trench MOSFET (OptiMOS 6 generation)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25°C 18 A —
Continuous Drain Current (ID) at TC=25°C 63 A —
On-Resistance RDS(on) max @ VGS=10V 4.5 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 2 V @ ID=250 µA —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) 13 nC @ VGS=10 V —
Input Capacitance (Ciss) 870 pF @ VDS=15 V —
Power Dissipation (PD) at TA=25°C 2.5 W —
Power Dissipation (PD) at TC=25°C 30 W —
Package SuperSO8 5x6 (PG-TDSON-8-6) PG-TSON-12-1 (PQFN 8x6 mm², clip-based)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +150 °C —
RoHS Status Compliant Compliant
Part Family — OptiMOS 6
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) @ TA=25°C — 53 A
Pulsed Drain Current @ TC=25°C — 451 A
Static R_DS(on) (typ) — 0.55 mΩ
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 214 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Operating Junction Temperature — -55°C to +175°C
AEC-Q100 — [DATA_NEEDED: automotive qualification status]

Datasheets & Resources

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