ISC045N03L5SATMA1 vs IQFH55N04NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC045N03L5SATMA1 dari Infineon dan IQFH55N04NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC045N03L5SATMA1 | IQFH55N04NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 / Trench | Trench MOSFET (OptiMOS 6 generation) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Paket | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C | — |
| Status RoHS | Compliant | Compliant |
| Part Family | — | OptiMOS 6 |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | — | 53 A |
| Pulsed Drain Current @ TC=25°C | — | 451 A |
| Static R_DS(on) (typ) | — | 0.55 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 214 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| AEC-Q100 | — | [DATA_NEEDED: automotive qualification status] |