ISC046N13NM6ATMA1 vs ISC011N06LM5ATMA1 Comparison
Detailed side-by-side comparison of ISC046N13NM6ATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC046N13NM6ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.08 | $0.74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 135 V | 60 V |
| Continuous Drain Current (ID) at TA | 17 A | β |
| Continuous Drain Current (ID) at TC | 142 A | β |
| Power Dissipation (PD) at TA | 3 W | β |
| Power Dissipation (PD) at TC | 211 W | β |
| Package / Case | PG-TDSON-8 | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 |
| Gate Drive (recommended) | 10 V (typical) | β |
| RoHS Status | Compliant | Compliant |
| Packaging | Tape & Reel | β |
| Part Number | β | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 37 A |
| Continuous Drain Current (ID) at Tc | β | 288 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 188 W |
| RDS(on) max at VGS=10V | β | 1.15 mOhm |
| Package | β | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Pin Count | β | 8 |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |