ISC046N13NM6ATMA1 vs ISC011N06LM5ATMA1 Perbandingan
Perbandingan bersamaan detil ISC046N13NM6ATMA1 dari Infineon dan ISC011N06LM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC046N13NM6ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 60 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Paket / Case | PG-TDSON-8 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C | -55C to +175C |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 |
| Gate Drive (recommended) | 10 V (typical) | — |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Part Number | — | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 37 A |
| Continuous Drain Current (ID) at Tc | — | 288 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Paket | — | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Jumlah Pin | — | 8 |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |