ISC052N03LF2SATMA1 vs ISC028N03LF2SATMA1 Perbandingan
Perbandingan bersamaan detil ISC052N03LF2SATMA1 dari Infineon dan ISC028N03LF2SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC052N03LF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 30V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 74 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΩ | 2.8 mOhm |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 52 W | — |
| Paket | PG-TDSON-8-62 (TDSON EP) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55°C to +150°C | — |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Polarity | N-Channel | — |
| Jumlah Pin | 8 | — |
| Status RoHS | Compliant | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 5 30V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 24 A |
| Continuous Drain Current (ID) at TC=25C | — | 128 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage VGS(th) typ | — | 2.35 V |
| Power Dissipation at TA | — | 3 W |
| Power Dissipation at TC | — | 83 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |
| RoHS / Lead-Free | — | Yes (RoHS compliant) |