ISC052N03LF2SATMA1 vs ISZ033N03LF2SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC052N03LF2SATMA1 sa pamamagitan ng Infineon at ISZ033N03LF2SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC052N03LF2SATMA1 - 30V N-Ch 74A OptiMOS 5 MOSFET | Infineon
ISC052N03LF2SATMA1 ✓ NakahandaInfineon
ISZ033N03LF2SATMA1 - 30V 109A N-Ch OptiMOS 5 MOSFET | Infineon
ISZ033N03LF2SATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC052N03LF2SATMA1 | ISZ033N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 30V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 74 A | — |
| On-Resistance RDS(on) max at VGS=10V | 5.2 mΩ | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 52 W | — |
| Packhaging | PG-TDSON-8-62 (TDSON EP) | PG-TSDSON-8 FL (8-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +150°C | — |
| Technology | Trench MOSFET (OptiMOS 5) | OptiMOS 5 |
| Polarity | N-Channel | — |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 20 A |
| Continuous Drain Current (ID) at TC=25C | — | 109 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TA=25C | — | 3 W |
| Power Dissipation (PD) at TC=25C | — | 71 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V max @ 30 uA |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typ] |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |