ISC056N08NM6ATMA1 vs ISC028N03LF2SATMA1 Comparison

Detailed side-by-side comparison of ISC056N08NM6ATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC056N08NM6ATMA1

ISC056N08NM6ATMA1 - 80V N-Ch OptiMOS 6 MOSFET | Infineon

ISC056N08NM6ATMA1 βœ“ Active
Infineon
ISC028N03LF2SATMA1

ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS

ISC028N03LF2SATMA1 βœ“ Active

Specification Comparison

Parameter ISC056N08NM6ATMA1 ISC028N03LF2SATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $0.86
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC056N08NM6ATMA1 β€”
Series OptiMOS 6 β€”
Technology N-Channel Trench MOSFET (OptiMOS 6) β€”
Drain-Source Voltage (VDS) 80 V β€”
Continuous Drain Current (ID) at TA=25Β°C 15.3 A β€”
Continuous Drain Current (ID) at TC=25Β°C 88 A β€”
Power Dissipation (PD) at TA=25Β°C 3 W β€”
Power Dissipation (PD) at TC=25Β°C 100 W β€”
Package PG-TDSON-8 FL (TDSON-8 Flat Lead) PG-TDSON-8-62 (5x6 mm) with exposed pad
Mounting Type Surface Mount Surface Mount
Polarity N-Channel β€”
Operating Temperature Range -55Β°C to +175Β°C β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS Status Compliant β€”
Product Family β€” OptiMOS 5 30V
Polarity / Channel Type β€” N-Channel
Drain-Source Voltage (VDS) max β€” 30 V
Continuous Drain Current (ID) at TA=25C β€” 24 A
Continuous Drain Current (ID) at TC=25C β€” 128 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 2.8 mOhm
Gate Threshold Voltage VGS(th) typ β€” 2.35 V
Power Dissipation at TA β€” 3 W
Power Dissipation at TC β€” 83 W
Operating Junction Temperature β€” -55 C to +175 C
RoHS / Lead-Free β€” Yes (RoHS compliant)

Datasheets & Resources

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