ISC056N08NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC056N08NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC056N08NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | ISC056N08NM6ATMA1 | — |
| Series | OptiMOS 6 | — |
| Technology | N-Channel Trench MOSFET (OptiMOS 6) | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TA=25°C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25°C | 88 A | — |
| Power Dissipation (PD) at TA=25°C | 3 W | — |
| Power Dissipation (PD) at TC=25°C | 100 W | — |
| Package | PG-TDSON-8 FL (TDSON-8 Flat Lead) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | N-Channel | — |
| Operating Temperature Range | -55°C to +175°C | — |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | Compliant |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Continuous Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Number of Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Operating Temperature | — | -55 °C to +175 °C |