ISC058N04NM5ATMA1 vs BSC059N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC058N04NM5ATMA1 sa pamamagitan ng Infineon at BSC059N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC059N04LSGATMA1 BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon

BSC059N04LSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC058N04NM5ATMA1 BSC059N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 40V Normal Level —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc=25C) 63 A 73 A
Continuous Drain Current (ID, Ta=25C) 17 A 16 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Packhaging PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 3 (N-channel trench MOSFET)
Hanay ng Temperature na Operasyon -55C to +175C -55 C to +150 C
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
On-State Resistance RDS(on) max @ VGS=10V — 5.9 mOhm
Power Dissipation (Tc=25C) — 50 W
Power Dissipation (Ta=25C) — 2.5 W
Gate-Source Threshold Voltage VGS(th) — 1.2 V to 2.0 V (typ)
Total Gate Charge Qg — [DATA_NEEDED: Qg total, typical nC]
Level ng MSL — 1 (per JEDEC J-STD-020)
Tindminan RoHS — Compliant
REACH Status — Compliant
Channel Type — N-Channel

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