ISC0805NLSATMA1 vs ISC110N12NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC0805NLSATMA1 by Infineon and ISC110N12NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC0805NLSATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.51 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TA=25Β°C | 13 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 71 A | β |
| Power Dissipation (PD) at TA | 2.5 W | β |
| Power Dissipation (PD) at TC | 74 W | β |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΞ© at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | 9.8 mΞ© |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΞ© | β |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | β |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | β |
| Input Capacitance Ciss | 2.2 nF | β |
| Reverse Transfer Capacitance Crss | 23 pF | β |
| Output Capacitance Coss | 360 pF | β |
| Package | PG-TDSON-8-46 (SuperSO8 5x6) | SuperSO8 (TDSON-8) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 11 A |
| Continuous Drain Current (ID) at Tc | β | 62 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.1 V |
| Total Gate Charge (Qg) | β | 15.4 nC |
| Input Capacitance (Ciss) | β | 1.1 nF |
| Output Capacitance (Coss) | β | 330 pF |
| Reverse Transfer Capacitance (Crss) | β | 10 pF |
| Power Dissipation (Pd) at Tc | β | 94 W |
| Power Dissipation (Pd) at Ta | β | 3 W |
| Avalanche Energy (EAS) | β | 185 mJ |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |