ISC0805NLSATMA1 vs ISC110N12NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC0805NLSATMA1 dari Infineon dan ISC110N12NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC0805NLSATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 5 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 120 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | 9.8 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| Paket | PG-TDSON-8-46 (SuperSO8 5x6) | SuperSO8 (TDSON-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C | — |
| Status RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 11 A |
| Continuous Drain Current (ID) at Tc | — | 62 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.1 V |
| Total Gate Charge (Qg) | — | 15.4 nC |
| Input Capacitance (Ciss) | — | 1.1 nF |
| Output Capacitance (Coss) | — | 330 pF |
| Reverse Transfer Capacitance (Crss) | — | 10 pF |
| Power Dissipation (Pd) at Tc | — | 94 W |
| Power Dissipation (Pd) at Ta | — | 3 W |
| Avalanche Energy (EAS) | — | 185 mJ |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |