ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
MPN: ISC300N20NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.92 | $4.92 |
| 10 | $4.43 | $44.30 |
| 100 | $3.94 | $394.00 |
| 500 | $3.54 | $1,770.00 |
| 1,000 | $3.15 | $3,150.00 |
ISC300N20NM6ATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power conversion, motor drive, and load management applications. The OptiMOS 6 family represents Infineon's latest 200V generation, optimized for both hard-switching and soft-switching topologies. Compared with older 200V MOSFET families, OptiMOS 6 reduces conduction and switching losses simultaneously, which translates directly to higher efficiency and smaller magnetics in switched-mode power supplies, half-bridges, and synchronous rectification stages.
Key features include a 200 V VDS rating, 44 A continuous drain current (TC), low RDS(on) of 27 mΩ typical, 3 W power dissipation (Ta) and 136 W (Tc), plus a logic-level gate drive capability compatible with 4.5 V VGS(th). The PG-TDSON-8 package offers an exposed drain pad for direct PCB heatsinking, achieving a thermal resistance that supports high continuous current in a compact footprint. Optimized cell structure minimizes body-diode reverse-recovery charge, enabling robust operation in half-bridge and full-bridge configurations.
Typical applications include telecom and server SMPS, industrial motor drives and solar inverters, synchronous rectification in isolated DC-DC converters, Class-D audio amplifiers, hot-swap and OR-ing controllers, and battery protection circuits in 48V e-mobility and e-bike systems. The 200V drain-source rating provides ample headroom for 100V and 150V bus designs.
When designing with this MOSFET, ensure the gate drive voltage is fully enhanced (10 V VGS recommended for lowest RDS(on)) and use Kelvin-source connection when available to suppress source-inductance induced ringing. Thermal management via the exposed drain pad is essential above 10 W dissipation.
Drop-in alternatives for ISC300N20NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with ISC300N20NM6ATMA1 (same form factor and footprint) — differing in Technology, Package, Drain-Source Voltage (VDS), Operating Temperature Range, Continuous Drain Current (ID) at TA=25°C.
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View Datasheet →ISC300N20NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 6 200V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TC | 44 A |
| Continuous Drain Current (ID) at Ta | 6.5 A |
| Power Dissipation (PD) at TC | 136 W |
| Power Dissipation (PD) at Ta | 3 W |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) |
| Gate Threshold Voltage (VGS(th)) | 4.5 V |
| Package | PG-TDSON-8 |
| Mounting Type | Surface Mount |
| Technology | OptiMOS 6 |
| Operating Mode | Enhancement |
| RoHS Status | Compliant |
ISC300N20NM6ATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | S — Source |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | D — Drain (also exposed pad) |
Safe Operating Area
Typical Applications
ISC300N20NM6ATMA1 is suitable for 7 applications: Telecom 48V Hot-Swap and OR-ing Controllers, Synchronous Rectification in Isolated DC-DC Converters, Industrial Motor Drive Half-Bridge Stages, Solar Microinverter and String Inverter Switching, Class-D Audio Amplifier Output Stage, Battery Protection in 48V E-Mobility Systems, Telecom Server SMPS Primary-Side Switch.
Telecom 48V Hot-Swap and OR-ing Controllers
The ISC300N20NM6ATMA1 fits 48V telecom hot-swap circuits because its 200V VDS provides substantial transient headroom against 80V telecom surge events, while its 44A continuous ID at TC supports the high inrush currents typical of server and base-station load steps. Its low RDS(on) of 27 mΩ at VGS=10V minimizes steady-state conduction loss across the MOSFET, improving efficiency in always-on OR-ing diodes. Place the MOSFET source on the lower-impedance side and use the exposed drain pad for direct PCB heatsinking to dissipate the 3-5W continuous loss during normal operation.
Recommended
Synchronous Rectification in Isolated DC-DC Converters
The ISC300N20NM6ATMA1 is an excellent synchronous rectifier in 48V-input half-bridge and full-bridge DC-DC converters because its OptiMOS 6 cell structure minimizes body-diode reverse-recovery charge (Qrr), reducing dead-time loss in zero-voltage-switching (ZVS) topologies. Its 27 mΩ typical RDS(on) at 10V VGS keeps conduction loss below 5W at 30A rectified current. Use a digital isolator or gate-drive transformer to deliver 10V VGS to fully enhance the device, and add a small RC snubber across drain-source to suppress ringing from the leakage inductance of the isolation transformer.
Recommended
Industrial Motor Drive Half-Bridge Stages
The ISC300N20NM6ATMA1 serves as the high-side or low-side switch in 96-150V BLDC and servo motor drives because its 200V VDS rating easily handles the bus voltage plus inductive kick spikes from motor winding commutation. The 44A continuous drain current at TC and 136W power dissipation rating support high-torque 5-10 kW motor drive designs. The OptiMOS 6 technology provides low switching loss at 50-100 kHz PWM frequencies, reducing motor current ripple and acoustic emissions. Use a dedicated three-phase gate driver like IR2110SPBF to control the high-side and low-side switches with proper dead-time insertion.
Recommended
Solar Microinverter and String Inverter Switching
The ISC300N20NM6ATMA1 fits solar microinverter and string inverter applications because its 200V VDS rating handles 100V-150V PV string open-circuit voltages with derating margin, and its 27 mΩ RDS(on) at 10V VGS minimizes conduction loss in continuous conduction mode. OptiMOS 6's low Qrr enables efficient zero-voltage-switching in phase-shifted full-bridge topologies commonly used in 1-3 kW solar inverters. Drive the gate at 10V to fully enhance the device and add a small gate-source resistor (10-100Ω) to suppress ringing from parasitic inductance in the gate-drive loop.
Recommended
Class-D Audio Amplifier Output Stage
The ISC300N20NM6ATMA1 is suited for Class-D audio amplifier half-bridge output stages in 100-150V rail designs because its 27 mΩ RDS(on) and low Qrr minimize switching loss at 250-500 kHz PWM frequencies, preserving audio fidelity and efficiency above 90%. The 200V VDS rating handles the bus voltage plus inductive overshoot from the LC output filter, while the 44A continuous ID supports amplifiers delivering 500W-1kW per channel. Use matched gate-driver timing and a small dead-time (50-100 ns) to prevent shoot-through and keep total harmonic distortion below 0.01%.
Recommended
Battery Protection in 48V E-Mobility Systems
The ISC300N20NM6ATMA1 protects 48V e-bike and light EV battery packs because its 200V VDS handles inductive transients from the motor controller disconnect events, and its 44A continuous ID supports peak discharge currents typical of 1-3 kW traction drives. OptiMOS 6's low RDS(on) keeps conduction loss under 2W during normal discharge, preserving battery range. Implement a battery management system that monitors cell voltage and temperature, and use the ISC300N20NM6ATMA1 as the high-side disconnect switch with the exposed drain pad soldered to substantial copper for thermal dissipation.
Recommended
Telecom Server SMPS Primary-Side Switch
The ISC300N20NM6ATMA1 fits server SMPS primary-side switch positions in 80-150V input telecom rectifier designs because its 200V VDS rating handles rectified AC bus voltages with surge margin, and its 27 mΩ RDS(on) reduces conduction loss in 2-3 kW converters. The 44A continuous ID supports peak transformer primary currents, while OptiMOS 6's fast switching transitions minimize turn-on and turn-off losses at 100-200 kHz. Drive the gate at 10V with a totem-pole driver and add a small RC snubber to limit drain-voltage ringing from the leakage inductance of the main transformer.
Recommended
Recommended Products Summary
Engineering reference data for ISC300N20NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | ISC151N08NM6ATMA1 | ISC045N03L5SATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 | IPB60R037P7XKSA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 family - same | PG-TDSON-8 - same |
| Drain-Source Voltage (VDS) | 200 V | 80 V | 30 V | 40 V | 40 V | 650 V | 30 V |
| Continuous Drain Current at TC | 44 A | 151 A | 45 A | 200 A | 76 A | 37 A | 180 A |
| On-Resistance (RDS(on)) | 27 mΩ | 1.7 mΩ | 4.5 mΩ | 1.1 mΩ | 7.6 mΩ | 37 mΩ | 3.5 mΩ |
| Technology Family | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | CoolMOS P7 | OptiMOS 5 |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | 3.5 V | 1.8 V (logic level) | 3.0 V | 3.0 V | 3.5 V | 1.8 V (logic level) |
Key Differentiators
- OptiMOS 6 200V technology delivers best-in-class figure-of-merit (FOM = RDS(on) x Qg) (vs ISC151N08NM6ATMA1)
- 200V VDS rating provides ample transient headroom for telecom and industrial bus designs (vs ISC151N08NM6ATMA1 (80V VDS))
- 44A continuous drain current at TC supports high-power converter designs (vs IPB60R037P7XKSA1 (37A at TC))
Design Notes
Estimated: at ID=20A continuous, VGS=10V, RDS(on)=27 mΩ, conduction loss is roughly P=I²×RDS(on)=10.8W. The PG-TDSON-8 package has a typical theta_JA of approximately 50-60 C/W on a standard 1oz 4-layer PCB with 6 cm² drain copper area. For continuous operation above 15A, the exposed drain pad must be soldered to substantial copper (at least 6 cm²) on top and inner PCB layers to keep junction temperature below 125 C. At maximum rated 44A continuous at TC=25 C, the 136W power dissipation rating requires active cooling or a heatsink attached to the drain tab.
Layout the PG-TDSON-8 footprint with maximum drain copper area on top layer, connecting through multiple thermal vias to inner PCB layers. Keep the gate-drive loop area minimal (gate resistor to gate pin, gate pin to source pin) to suppress parasitic inductance that causes gate ringing during fast switching transitions. Place a 10-100 Ω gate resistor in series with the gate drive to dampen ringing, and use a Kelvin-source connection (separate source sense trace) when the package allows to avoid source-inductance induced turn-on losses.
The PG-TDSON-8 has 4 source pins (pins 2-5) which must all be soldered to the PCB ground plane for lowest source inductance and best thermal performance. Add a small RC snubber (10 Ω + 1 nF) across drain-source if the application has high parasitic inductance in the power loop, such as long lead wires between the MOSFET and bulk capacitors. Keep high-current traces short and wide (≥2 mm for 20A continuous) to minimize voltage drops and inductive overshoot during switching transients.
Do not operate this 200V MOSFET with VGS below 10V in high-current applications because partial enhancement significantly increases RDS(on) and conduction loss. According to the Infineon OptiMOS 6 datasheet, RDS(on) increases roughly 2x when VGS drops from 10V to 6V. Verify gate-drive voltage under worst-case load conditions (including driver supply droop during high current). Do not exceed 200V VDS even transiently - add a TVS diode or active clamp circuit if the application has inductive kick-back from motor or transformer windings.
Compliance Information
RoHS compliant per Infineon product page. Standard grade (non-automotive); AEC-Q100 qualified variants not available in this part number.
