ISC300N20NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC300N20NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC300N20NM6ATMA1 - 200V 44A OptiMOS 6 N-Channel MOSFET | Infineon
ISC300N20NM6ATMA1 ✓ ActiveSpecification Comparison
| Parameter | ISC300N20NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 200V | — |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 80 V |
| Continuous Drain Current (ID) at TC | 44 A | — |
| Continuous Drain Current (ID) at Ta | 6.5 A | — |
| Power Dissipation (PD) at TC | 136 W | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Drain-Source On-Resistance (RDS(on)) | 27 mΩ (typical) | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V | — |
| Package | PG-TDSON-8 | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 | OptiMOS 6 |
| Operating Mode | Enhancement | — |
| RoHS Status | Compliant | Compliant |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Continuous Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Number of Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Operating Temperature | — | -55 °C to +175 °C |