ISC800P06LMATMA1 vs ISZ056N03LF2SATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC800P06LMATMA1 disebabkan oleh Infineon dan ISZ056N03LF2SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | ISC800P06LMATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | 30 V |
| Continuous Drain Current (ID) at TC | 19.6 A | — |
| Power Dissipation (PD) at TC | 83 W | — |
| Kemasan | PG-TDSON-8 (TDSON EP, 5x6 mm) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS trench MOSFET | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 2.35 V (typ) |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | -55 C to +175 C |
| Kiraan Pin | 8 | — |
| Lead-Free | Yes (per Infineon product page) | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Avalanche Rated | Yes (per Infineon datasheet) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET 2 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |