ISCH57N04NM7VSCATMA1 vs IPC50N04S5L5R5ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma ISCH57N04NM7VSCATMA1 tarafından Infineon ve IPC50N04S5L5R5ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ AktifInfineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | ISCH57N04NM7VSCATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (trench) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 214 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C (typical MOSFET junction range) | -55 °C to +175 °C |
| Paket | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | — |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| RoHS Durumu | Compliant | — |
| Transistor Türü | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| Avalanche Rating | — | 100 % Avalanche Tested |
| RoHS / REACH | — | RoHS Compliant (Green Product) |