ISCH57N04NM7VSCATMA1 vs IQDH35N03LM5SCATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma ISCH57N04NM7VSCATMA1 tarafından Infineon ve IQDH35N03LM5SCATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
ISCH57N04NM7VSCATMA1 - 40V 443A OptiMOS 7 Dual-Side Cooled MOSFET | Infineon
ISCH57N04NM7VSCATMA1 ✓ AktifInfineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | ISCH57N04NM7VSCATMA1 | IQDH35N03LM5SCATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (trench) | OptiMOS 5 (trench, shielded-gate) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Ta | 52 A | 66 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc value, datasheet not in verified data] | — |
| Pulsed Drain Current (IDM) at Tc | 443 A | 700 A |
| Power Dissipation (PD) at Ta | 3 W | 2.5 W |
| Power Dissipation (PD) at Tc | 214 W | 278 W |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C (typical MOSFET junction range) | -55 C to +175 C |
| Paket | PG-WSON-8-2 (PQFN 5x6 mm, Dual Side Cooled) | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single N-channel, source-down lead-frame | — |
| Cooling | Dual Side Cooled (top + bottom thermal interface) | — |
| RoHS Durumu | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Transistor Türü | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| On-State Resistance (RDS(on)) max | — | 0.35 mOhm @ VGS=10V |
| MSL Seviyesi | — | 1 (unlimited) |
| Marking | — | IQDH35N03LM5S |