ISZ023N06LM6ATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of ISZ023N06LM6ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISZ023N06LM6ATMA1

ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon

ISZ023N06LM6ATMA1 βœ“ Active
Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter ISZ023N06LM6ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 60 V OptiMOS 3
Part Number ISZ023N06LM6 β€”
Orderable Part Number ISZ023N06LM6ATMA1 β€”
FET Type N-Channel 2x N-Channel MOSFET array
Technology MOSFET (Metal Oxide) Trench MOSFET (OptiMOS 3)
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at Ta 24 A β€”
Pulsed Drain Current (ID, Tc) 149 A β€”
Power Dissipation (Ta) 2.5 W 2.3 W
Power Dissipation (Tc) 100 W 65 W
Package PG-TSDSON-8-34 (Surface Mount) β€”
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +175C β€”
MSL Level 1 β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Configuration Single Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max β€” 40 V
Continuous Drain Current (ID) β€” 20 A (Tc)
Gate Threshold Voltage (VGS(th)) β€” 4 V (max, typical)
On-Resistance RDS(on) max β€” 7.6 mOhm
Qgd/Qgs Ratio β€” < 0.8 (high shot-through immunity)
Operating Junction Temperature β€” -55 C to +175 C
Package / Case β€” PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free β€” Compliant (Pb-free plating)

Datasheets & Resources

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