ISZ023N06LM6ATMA1 vs BSC076N04NDATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISZ023N06LM6ATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISZ023N06LM6ATMA1 - 60V 149A OptiMOS 6 N-Channel MOSFET | Infineon
ISZ023N06LM6ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISZ023N06LM6ATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 60 V | OptiMOS 3 |
| Part Number | ISZ023N06LM6 | — |
| Orderable Part Number | ISZ023N06LM6ATMA1 | — |
| FET Type | N-Channel | 2x N-Channel MOSFET array |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET (OptiMOS 3) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 24 A | — |
| Pulsed Drain Current (ID, Tc) | 149 A | — |
| Power Dissipation (Ta) | 2.5 W | 2.3 W |
| Power Dissipation (Tc) | 100 W | 65 W |
| Packhaging | PG-TSDSON-8-34 (Surface Mount) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55C to +175C | — |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Configuration | Single | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | — | 4 V (max, typical) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Packhaging / Kaso | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |