ISZ072N06NM6ATMA1 vs ISC009N06NM6ATMA1 比較
詳細並排比較 ISZ072N06NM6ATMA1 由 Infineon 與 ISC009N06NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISZ072N06NM6ATMA1 | ISC009N06NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60V | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 57 A | — |
| Continuous Drain Current (ID, Ta) | 12.7 A | — |
| RDS(on) max @ VGS=10V | 7.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 3.3 V (typ) | — |
| 功率耗散 (TC=25°C) | 50 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| 封裝 | PG-TSDSON-8-34 (TSDSON-8 FL) | PG-TDSON-8 (3.3 x 3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C ( Tj max 175C ) | -55 °C to +175 °C |
| Technology | OptiMOS 6 trench MOSFET | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | MSL1 (per JEDEC J-STD-020) |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta=25C | — | 40 A |
| Pulsed Drain Current (IDM) at Tc=25C | — | 344 A |
| Power Dissition (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 221 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| RDS(on) max @ VGS=10 V | — | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| 無鹵素 | — | Yes |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 status] |