K4A4G085WD-BCRC vs K4A4G085WE-BCRC Comparison
Detailed side-by-side comparison of K4A4G085WD-BCRC by Samsung Electronics and K4A4G085WE-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G085WD-BCRC | K4A4G085WE-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.58 | $1.36 |
| Memory Density | 4 Gbit | — |
| Organization | 512M x 8 | 512M x 8 |
| Memory Type | DDR4 SDRAM (D-die) | DDR4 SDRAM |
| Data Rate | 2400 Mb/s (PC2400) | 2400 Mbps |
| Supply Voltage | 1.2 V | — |
| Package | FBGA-78 (TFBGA) | FBGA-78 |
| Number of Terminals | 78 | — |
| Interface | Parallel | Parallel |
| Access Mode | Multi-bank page burst | — |
| Mounting Type | Surface Mount | Surface Mount |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Operating Temperature Range | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | 8n / 1X refresh (per JEDEC DDR4) |
| RoHS Status | [DATA_NEEDED: RoHS Status] | Compliant (per LCSC listing) |
| MSL Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: Moisture Sensitivity Level] |
| Density | — | 4 Gbit |
| Clock Cycle Time (tCK) | — | 0.833 ns |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Core Voltage (VPP) | — | 2.5 V |
| Process Node Family | — | Samsung E-die |
| Bank Groups | — | 4n prefetch DDR4 architecture |
| Operating Temperature | — | [DATA_NEEDED: Operating Temperature Range] |