K4A4G085WD-BCRC vs K4A4G085WG-BCWE Comparison

Detailed side-by-side comparison of K4A4G085WD-BCRC by Samsung Electronics and K4A4G085WG-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A4G085WD-BCRC K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung

K4A4G085WD-BCRC - 4Gb DDR4-2400 SDRAM 512Mx8 | Samsung

K4A4G085WD-BCRC ✓ Active
Samsung Electronics
K4A4G085WG-BCWE K4A4G085WG-BCWE - 4Gb DDR4 3200Mbps SDRAM | Samsung

K4A4G085WG-BCWE - 4Gb DDR4 3200Mbps SDRAM | Samsung

K4A4G085WG-BCWE ✓ Active

Specification Comparison

Parameter K4A4G085WD-BCRC K4A4G085WG-BCWE
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.58 $2.68
Memory Density 4 Gbit —
Organization 512M x 8 —
Memory Type DDR4 SDRAM (D-die) DDR4 SDRAM (Volatile)
Data Rate 2400 Mb/s (PC2400) 3200 Mbps/pin
Supply Voltage 1.2 V —
Package FBGA-78 (TFBGA) FBGA-78 (BCW)
Number of Terminals 78 —
Interface Parallel Parallel (DDR4)
Access Mode Multi-bank page burst —
Mounting Type Surface Mount Surface Mount
CAS Latency [DATA_NEEDED: CAS Latency] —
Operating Temperature Range [DATA_NEEDED: Operating Temperature Range] —
Refresh [DATA_NEEDED: Refresh specification] [DATA_NEEDED: refresh rate specification]
RoHS Status [DATA_NEEDED: RoHS Status] Compliant
MSL Level [DATA_NEEDED: MSL Level] —
Memory Size — 4 Gb
Memory Organization — 512M x 8
Speed Class — DDR4-3200
Supply Voltage (VDD) — 1.2 V
Technology — D-die DDR4
Burst Length — BL8
DLL Mode — DLL Enabled (per datasheet timing)
Operating Temperature — [DATA_NEEDED: operating temperature range]
Packaging — Tray

Datasheets & Resources

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